1.Overview of Information Data Storage：An Introduction&Gan Fuxi

1.1 Importance and Research Aims of Information Data Storage

1.2 Development Trends of Different Information Storage Devices

1.2.1 In-Line Data Storage

1.2.2 Storage Class Memory

1.2.3 Magnetic Data Storage

1.2.4 Rethinking of Optical Data Storage Development

1.3 Nanolithography for Information Storage

1.3.1 Characteristics of and Requirements for Nanolithography

1.3.2 Nanolithography by Optical Means

1.3.3 Advanced Optical Lithography

1.4 Fast Phase Change

1.4.1 Fast Phase Change Initiated by Ultra-Short Laser Pulse

1.4.2 New Application of Phase Change Process in Information Data Storage Field

2.Super-Resolution Optical Data Storage Using Binary Optics&Wang Haifeng and Gan Fuxi

2.1 Design of the Super-Resolution Binary Optics

2.1.1 Binary Optics Design Based on Scalar Diffraction Theory

2.1.2 Binary Optics Design Based on Vector Diffraction Theory

2.2 Generation of Super-Resolution Longitudinally Polarized Light Beamwith Binary Optics

2.3 Application of Binary Optics to Near-Field Recording

2.3.1 System Configuration for Circular Polarized Light

2.3.2 System Configuration for Longitudinally Polarized Light

2.3.3 Near-Field Recording Using Optical Antennas

3.Focal Spot Engineering for Bit-by-Bit Recording&Gan Xiaosong and Wu Jingzhi

3.1 Introduction

3.2 Far-Field Modulation for Super-Resolution Focal Spot

3.3 Saturation Microscopy

3.4 Breaking the Diffraction Limit Without Diffraction？

3.5 Discussion

4.Plasmonic Nanofocusing and Data Storage&Cao Qing

4.1 Surface Plasmon and Its Properties

4.1.1 Surface Plasmons

4.1.2 Enhanced Transmission

4.1.3 Metal Wire Surface Plasmon

4.1.4 Surface Plasmon Laser

4.1.5 Graphene Plasmon

4.2 Plasmonic Nanofocusing and Nanoimaging

4.2.1 Tapered Structure

4.2.2 Multiple Concentric Groove Metallic Lens

4.2.3 Metal Films for Super-Diffraction-Limited Imaging

4.3 Plasmonic Data Storage at the Nanoscale

4.3.1 Brief Introduction of High-Density Optical Data Storage

4.3.2 Two Basic Concepts of Plasmonic Data Storage

4.3.2.1 High-density data storage technology mixed with plasmonic near-field transducers and bit-patterned magnetic materials

4.3.2.2 Five-dimensional optical recording mediated by surface plasmons in gold nanorods

4.4 Plasmonic Nanolithography

4.4.1 Brief Introduction of Plasmonic Nanolithography

4.4.2 Plasmonic Contact Lithography

4.4.3 Imaging Lithography of Planar Lens

4.4.4 Plasmonic Direct Writing Nanolithography

5.Nano-Optical Data Storage with Nonlinear Super-Resolution Thin Films&Wei Jingsong and Gan Fuxi

5.1 Introduction

5.2 The Principle of Nonlinear Super-Resolution Nano-Optical Data Storage

5.3 Optical Response of the Nonlinear Layer

5.3.1 Nonlinear Response of Sb-Based Phase Change Thin Films

5.3.2 Nonlinear Response of Metal Doped Semiconductor Thin Films

5.3.2.1 The sample preparation

5.3.2.2 Measurement of the optical nonlinear properties

5.3.2.3 The mechanism of nonlinear response

5.4 The Formation of Super-Resolution Optical Spot

5.4.1 Theoretical Basis of Super-Resolution Spot Formation

5.4.2 Super-Resolution Spot Formation by Ag Doped Si Thin Films

5.4.3 Super-Resolution Spot Formation by Sb-Based Phase Change Thin Films

5.5 Experimental Results of the Nano-Optical Data Recording and Readout

5.6 On the Dynamic Readout Characteristic of the Nonlinear Super-Resolution Thin Films

5.6.1 Theoretical Analysis of the Dependence of Readout Threshold Power on Mark Size

5.6.2 Dependence of Readout Characteristic on Laser Power

5.6.3 Dependence of Readout Characteristic on Laser Irradiation Time

5.6.4 Analysis of the Influence of Laser Energy on Dynamic Readout Characteristic

5.7 Conclusion

6.Mastering Technology for High-Density Optical Disc&Geng Yongyou and Wu Yiqun

6.1 Introduction

6.2 Major Mastering Technologies for High-Density Optical Disc

6.2.1 Electron Beam Recording

6.2.2 UV and DUV Recording

6.2.3 Near-Field Optical Recording

6.2.4 Laser Thermal Recording

6.2.4.1 Mechanism of laser thermal recording

6.2.4.2 Materials for laser thermal recording

6.2.4.3 Writing strategy for laser thermal recording

6.2.5 STED Recording

6.2.5.1 Principle of STED microscopy

6.2.5.2 Applications in nanorecording

6.3 Conclusion

7.Laser-Induced Phase Transition and Its Application in Nano-Optical Storage&Wang Yang and Gan Fuxi

7.1 Introduction：Phenomena and Applications of Laser-Induced Phase Transition in the Optical Storage

7.1.1 Amorphous and Crystalline States for Binary Memory

7.1.2 Transient States for Self-Masking Super-Resolution

7.1.3 Meta-Stable Multi-States for Multilevel Recording

7.2 Physical Process of Laser-Induced Phase Transition

7.3 Probing Method for Laser-Induced Phase Transition Process

7.4 Phase Transition Dynamics Driven by Laser Pulses

7.4.1 Carrier Dynamics Driven by Ultrashort Laser Pulses

7.4.2 Laser Pulse-Induced Amorphization Process

7.4.3 Laser Pulse-Induced Crystallization Process

7.4.3.1 Comparison of optical and electrical transient response during nanosecond laser pulse-induced crystallization

7.4.3.2 Optical transients during the picosecond laser pulse-induced crystallization：comparison of nucleation-driven and growth-driven processes

7.4.3.3 Optical transients during the femtosecond laser pulse-induced crystallization

7.5 Phase-Change Optical Disk Technology

7.6 New Optical Memory Functions Based on Phase-Change Materials

7.6.1 Fast Cycling Driven by Ultrashort Laser Pulses with Identical Fluences

7.6.2 Optical-Electrical Hybrid Operation for Phase-Change Materials

7.6.3 Metal-Nanop article-Embedded Phase-Change Recording Pits for Plasmonics and Super-Resolution

7.6.4 Polarization Readout for Multilevel Phase-Change Recording by Crystallization Degree Modulation

7.6.5 Polarized Laser-Induced Dichroism of Phase-Change Materials

7.6.6 Fluorescence Multi-States of Ion-Doped Phase-Change Thin Films

8.SPIN-Based Optical Data Storage&Gu Min，Cao Yaoyu，Li Xiangping，and Gan Zongsong

8.1 SPIN Based on Single-Photon Photoinduction

8.1.1 Theoretical Model of the SPIN Process

8.1.2 Experimental Demonstration of Single-Photon SPIN

8.2 SPIN Based on Two-Photon Photoinduction

8.2.1 Experimental Demonstration of Two-Photo SPIN

8.2.2 Properties and Limitations

8.3 Conclusion

9.Magnetic Random Access Memory&Han Xiufeng and Syed Shahbaz Ali

9.1 History of the Development of MRAM Devices

9.2 MRAM Devices Based on GMR/AMR Effects

9.3 Field-Write Mode MRAM Based on TMR Effect

9.3.1 Astroid-Mode MRAM

9.3.2 Principles of Astroid-Mode MRAM

9.3.3 Development of Astroid-Mode MRAM

9.3.4 Toggle-Mode MRAM

9.3.5 Principles of Toggle-Mode MRAM

9.3.6 Write-Current Reduction in Toggle-Mode MRAM

9.3.7 Energy Diagram of Toggle Operation

9.3.8 Competitive Market

9.3.9 MRAM Based on Vertical Current Writing and Its Control Method

9.3.10 Field-Write Mode MRAM Chip-Design

9.4 Spin Transfer Torque MRAM Based on Nanoscale Magnetic Tunnel Junction MTJ

9.4.1 Spin Transfer Torque Effects

9.4.2 STT Effects in a Multilayer Thin-Film Stack

9.4.3 STT MRAM with an in-Plane Magnetic Configuration

9.4.4 Switching Characteristics and Threshold in MTJs

9.4.5 Switching Probability in the Thermal Regime

9.4.6 STT MRAM with a Perpendicular Magnetic Configuration

9.4.7 Principles of STT-MRAM with a Perpendicular Magnetic Configuration

9.4.8 Reliability of Tunnel Barriers in MTJs

9.4.9 Write-Current Reduction

9.4.10 Current-Write Mode MRAM Chip-Design

9.4.11 Introduction of the STT-MRAM Chip Design

9.5 Asymmetric MTJ Switching

9.6 Nanoring and Nano-Elliptical Ring-Shaped MTJ-Based MRAM

9.7 Thermally Assisted Field Write in MRAM

9.7.1 Self-Referenced MRAM

9.8 Outlook to the Future MRAM

9.8.1 Separated Read and Write Operation MRAM

9.8.2 Domain Wall Motion MRAM

9.8.3 Rashba Effect/Spin-Orbital Coupling Effect Based MRAM

9.8.4 Spin Hall Effect-Based MRAM

9.8.5 Electric Field Switching MRAM

9.8.6 Roadmap of MRAM Demo Device Development

10.RRAM Device and Circuit&Lin Yinyin，Song Yali，and Xue Xiaoyong

10.1 Introduction

10.2 RRAM Cell

10.2.1 1T1R Cell with Transistor as Selector Device

10.2.1.1 1T1R cell structure

10.2.1.2 Bipolar and unipolar operation

10.2.2 Cell Using Diode as Selector Device

10.2.2.1 1D1R cell with traditional one-directional diode as selector device for unipolar operation

10.2.2.2 1BD1R cell with bidirectional diode as selector device in support of both bipolar and unipolar operation

10.2.3 Self-Selecting RRAM Cell

10.2.3.1 Hybrid memory

10.2.3.2 Complementary-RRAM

10.3 Resistive Switching Mechanism

10.3.1 ITRS Categories of RRAM

10.3.2 Resistive Switching Behavior

10.3.3 Forming and SET Process

10.3.4 Filament Type

10.3.5 Filament Size and the Scaling Characteristics

10.4 Influencing Factors and Optimization of RRAM Performance

10.4.1 Decrease of Switching Current

10.4.1.1 Multilayer architecture

10.4.1.2 Control of the compliance current

10.4.2 Enhancement of Uniformity

10.4.2.1 Electrode effects

10.4.2.2 Buffer layer inserting and bilayer construct

10.4.2.3 Embedded metal to control conductive path

10.4.2.3 Programming algorithm

10.5 RRAM Reliability

10.5.1 The Retention Test Method

10.5.2 Retention Model and Improvement Methods

10.5.2.1 RRAM retention failure model

10.5.2.2 Retention improvement by forming high-density Vo

10.5.2.3 Retention improvement by dynamic self-adaptive write method

10.5.3 Endurance Model and Improvement Methods

10.5.3.1 Endurance failure model

10.5.3.2 High-endurance cell architecture

10.5.3.3 Enhancement of endurance by programming algorithm

10.6 Circuit Techniques for Fast Read and Write

10.6.1 Current SA for High-Speed Read

10.6.1.1 Feedback-regulated bit line biasing approach

10.6.1.2 Process-temperature-aware dynamic BL-bias scheme

10.6.2 Fast Verify for High-Speed Write

10.7 Yield and Reliability Enhancement Assisted by Circuit

10.7.1 Circuit Techniques to Improve Read Yield

10.7.1.1 Parallel-series reference cell

10.7.1.2 SARM reference

10.7.1.3 Body-drain-driven current sense amplifier

10.7.1.4 Temperature-aware bit line biasing

10.7.2 Circuit-Assisted Write Yield Improvement and Operation Power Reduction

10.7.2.1 Self-adaptive write mode

10.7.2.2 Self-timing write with feedback

10.7.3 Circuit-Assisted Endurance and Retention Improvement

10.7.3.1 Filament scaling forming technique and level-verify-write scheme

10.7.3.2 Dynamic self-adaptive write method

10.8 Circuit Strategies for 3D RRAM

10.8.1 Sneaking Path and Large Power Consumption of Conventional Cross-Bar Architecture

10.8.2 3D RRAM Based on 1TXR Cell without Access Transistor

10.8.2.1 1TXR cell

10.8.2.2 Array architecture

10.8.2.3 Write algorithm to inhibit write disturbance

10.8.2.4 Read algorithm to inhibit read disturbance

10.8.3 3D RRAM Based on 1D1R Cell

10.8.3.1 Array architecture

10.8.3.2 Write circuit with leakage compensation for accurate state-change detection

10.8.3.3 Read circuit with bit line capacitive isolation for fast swing in SA

10.8.4 3D RRAM Based on 1BD1R

10.8.4.1 Array architecture

10.8.4.2 Programming conditions for 1BD array

10.8.4.3 Multi-bit write architecture with write dummy cell

10.8.5 Vertical Stack with Cost Advantage of Lithography

10.8.5.1 Cross section of cell and array

10.8.5.2 Integration

10.8.5.3 Cost advantage of lithography

11.Phase-Change Random Access Memory&Liu Bo

11.1 Introduction

11.2 Principle of PCRAM

11.3 Comparisons between PCRAM and SRAM，DRAM and Flash

11.4 History of PCRAM R＆D

11.5 Phase-Change Material

11.5.1 Materials Selective Method

11.5.2 GeSbTe System

11.5.3 SbTe-Based Materials

11.5.4 SiSbTe System

11.5.5 GeTe System

11.5.6 Sb-Based Materials

11.5.7 Nano-Composite Phase-Change Materials

11.5.8 Superlattice-Like Structure Phase-Change Materials

11.6 Memory Cell Selector

11.6.1 Overview

11.6.2 Diode

11.7 Memory Cell Resistor Structure

11.8 Processing

11.8.1 Deposition of Phase-Change Materials

11.8.2 Etching of Phase-Change Materials

11.8.3 Chemical Mechanical Polishing of Phase-Change Materials

11.9 Characteristics of PCRAM Memory Cell

11.9.1 Reduction of Operation Current/Voltage

11.9.2 Reliability

11.9.3 Data Retention

11.9.4 Speed

11.10 Future Outlook

11.10.1 Scaling Properties

11.10.2 Multi-Bit Operation

11.10.3 Three-Dimensional Integration

11.11 Potential Application of PCRAM

12.Nano-DRAM Technology for Data Storage Application&Wang Pengfei and Zhang David Wei

12.1 Introduction to DRAM Cell Technology

12.1.1 Cell Operation of DRAM Cell

12.1.2 DRAM Device and Array Structure

12.1.3 Requirements of Nano-Scale DRAM Cell

12.1.3.1 Capacitance of the storage node

12.1.3.2 Drive current and off leakage current of array access transistor

12.2 Nano-DRAM Memory Cell and Array Design

12.2.1 Layout of the Stacked-Capacitor DRAM

12.2.2 Design of the Array Transistor

12.2.2.1 RCAT and saddle-fin transistor

12.2.2.2 Extended U-shaped device

12.2.2.3 FinFET for DRAM

12.2.2.4 Spherical transistor and buried word line array device

12.2.3 Cell Architecture

12.2.3.1 Connection between the storage capacitor and array transistor

12.2.3.2 6F2 cell design

12.2.4 Storage Capacitor

12.3 Novel DRAM Concepts

12.3.1 Floating Body Memory Cell

12.3.2 Tunneling Transistor-Based Memory Cell

12.3.2.1 Device working principle

12.3.2.2 Device operation

12.3.2.3 Modeling of the memory access transistor of SFG DRAM：TFET

12.3.2.4 Capacitive coupling in the SFG DRAM cell

12.3.2.5 Transient behavior

12.3.2.6 Investigation of the integration methods

12.3.2.7 Self-refreshable “1” and nondestructive read properties

12.3.2.8 Scalability and U-shaped SFG memory

12.3.2.9 Extended applications of SFG：1-T Image sensor

12.3.2.10 Integration with logic and flash memory devices

12.4 Conclusions

13.Ferroelectric Memory&Wang Genshui，Gao Feng and Dong Xianlin

13.1 Introduction

13.2 Ferroelectricity

13.2.1 Historical Overview

13.2.2 Characteristics

13.2.2.1 Polarization and hysteresis

13.2.2.2 Domains and switching

13.2.2.3 Materials

13.2.2.4 Perovskite oxides

13.2.2.5 Size effects

13.2.2.6 Strain

13.2.3 Applications

13.3 Ferroelectric Memory

13.3.1 FeRAM

13.3.1.1 FeCapacitor

13.3.1.2 Depolarizing fields and critical thickness

13.3.1.3 FeRAM

13.3.2 FeFETRAM

13.3.3 Reliabilities

13.3.3.1 Retention

13.3.3.2 Endurance

13.3.3.3 Temperature-dependent dielectric anomaly

13.3.4 Key Technologies

13.3.5 Competing Memory Technologies

13.4 Future Prospects

13.4.1 Multiferroics Memory

13.4.2 Nanoscale Ferroelectric Memory

13.4.3 Organic Ferroelectric Memory

13.5 Conclusions

14.Nanomagnetic and Hybrid Information Storage&Jin Qingyuan and Ma Bin

14.1 Overview of Magnetic Recording and Hard Disk Drive

14.2 Hard Drive Technology

14.2.1 Inductive Magnetic Head

14.2.2 Magnetoresistive Head

14.2.3 Giant Magnetoresistive Head

14.3 Hard Drive Technology

14.3.1 Superparamagnetic Effect and Bottleneck of Longitudinal Recording Media

14.3.2 Perpendicular Recording Media

14.3.3 L10-Ordered FePt

14.3.4 Exchange-Coupled Composite Media

14.4 Emerging Magnetic Data Storage Technology

14.4.1 Perpendicular Magnetic Recording

14.4.2 Heat-Assisted Magnetic Recording

14.4.3 Patterned Media

Index